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STB9NK60ZDT4 데이터시트(PDF) 3 Page - STMicroelectronics |
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STB9NK60ZDT4 데이터시트(HTML) 3 Page - STMicroelectronics |
3 / 12 page 3/12 STP9NK60ZD - STF9NK60ZD - STB9NK60ZD ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1mA,VGS =0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS =Max Rating VDS = Max Rating, TC =125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS =VGS,ID = 100µA 2.5 3.5 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 3.5 A 0.85 0.95 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =15 V, ID =3.5 A 5.3 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =25V, f =1 MHz, VGS =0 1110 135 30 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS =0V, VDS = 0V to 480V 72 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 300 V, ID =3.5 A RG =4.7Ω VGS =10 V (Resistive Load see, Figure 3) 22 17 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID =7A, VGS = 10V 41 8.7 21 53 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, ID =3.5 A RG =4.7Ω VGS =10 V (Resistive Load see, Figure 3) 42 15 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID =7A, RG =4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 11 8 20 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 7 28 A A VSD (1) ForwardOnVoltage ISD =7 A, VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7 A, di/dt = 100A/µs VDD = 30V, Tj =25°C (see test circuit, Figure 5) 150 663 8.5 ns nC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7 A, di/dt = 100A/µs VDD = 30V, Tj =150°C (see test circuit, Figure 5) 194 935 9.6 ns nC A |
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