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BC368ZL1G 데이터시트(PDF) 2 Page - ON Semiconductor |
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BC368ZL1G 데이터시트(HTML) 2 Page - ON Semiconductor |
2 / 4 page BC368 (NPN), BC369 (PNP) http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 20 − − Vdc Collector − Base Breakdown Voltage (IC = 100 mA, IE = 0 ) V(BR)CBO 25 − − Vdc Emitter − Base Breakdown Voltage (IE = 100 mA, IC = 0) V(BR)EBO 5.0 − − Vdc Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TJ = 150°C) ICBO − − − − 10 1.0 mAdc mAdc Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO − − 10 mAdc ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) (VCE = 1.0 V, IC = 0.5 A) BC368, 369 BC368−25 (VCE = 1.0 V, IC = 1.0 A) hFE 50 85 170 60 − − − − − 375 375 − − Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) fT 65 − − MHz Collector−Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VCE(sat) − − 0.5 V Base−Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) VBE(on) − − 1.0 V |
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