전자부품 데이터시트 검색엔진 |
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TPC8010-H 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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TPC8010-H 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPC8010-H 2002-03-12 4 Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Drain current ID (A) |Yfs| – ID Drain current ID (A) RDS (ON) – ID 0 2 4 6 8 10 0 2 4 6 8 10 Common source Ta = 25°C Pulse test VGS = 2 V 2.4 2.5 3 10 2.6 2.2 5 2.8 2.7 2.3 4 4 8 12 16 20 Common source Ta = 25°C Pulse test 2.6 2.5 2.4 2.3 VGS = 2.1 V 2.7 10 3 0 8 12 16 20 4 0 4 2.8 5 0 0 1 2 3 4 5 10 20 30 40 100 Ta = −55°C Common source VDS = 10 V Pulse test 25 0.6 0 0.2 0.4 0.8 1 0 2 4 6 10 12 8 Common source Ta = 25°C Pulse test ID = 11 A 5.5 2.5 Common source VDS = 10 V Pulse test 0.1 1 10 100 0.3 1 3 10 30 100 Ta = −55°C 100 25 Common source Ta = 25°C Pulse test 30 10 3 1 0.3 0.1 1 3 10 30 100 10 VGS = 4.5 V |
유사한 부품 번호 - TPC8010-H |
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유사한 설명 - TPC8010-H |
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