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IXSH30N60U1 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 2 Page - IXYS Corporation

๋ถ€ํ’ˆ๋ช… IXSH30N60U1
์ƒ์„ธ๋‚ด์šฉ  Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability
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์ œ์กฐ์‚ฌ  IXYS [IXYS Corporation]
ํ™ˆํŽ˜์ด์ง€  http://www.ixys.com
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IXSH30N60U1 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 2 Page - IXYS Corporation

   
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ยฉ 2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J = 25ยฐC, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90; VCE = 10 V,
7
13
S
Pulse test, t
ยฃ 300 ms, duty cycle ยฃ 2 %
I
C(on)
V
GE = 15 V, VCE = 10 V
100
A
C
ies
2760
pF
C
oes
V
CE = 25 V, VGE = 0 V, f = 1 MHz
240
pF
C
res
51
pF
Q
g
110
150
nC
Q
ge
I
C = IC90, VGE = 15 V, VCE = 0.5 VCES
34
45
nC
Q
gc
47
63
nC
t
d(on)
60
ns
t
ri
130
ns
t
d(off)
400
ns
t
fi
30N60U1
400
ns
30N60AU1
200
ns
E
off
30N60AU1
2.5
mJ
t
d(on)
60
ns
t
ri
130
ns
E
on
4.2
mJ
t
d(off)
30N60U1
540
1000
ns
30N60AU1
340
525
ns
t
fi
30N60U1
600
1500
ns
30N60AU1
340
700
ns
E
off
30N60U1
12
mJ
30N60AU1
6
mJ
R
thJC
0.63 K/W
R
thCK
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J = 25ยฐC, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F = IC90, VGE = 0 V,
1.6
V
Pulse test, t
ยฃ 300 ms, duty cycle d ยฃ 2 %
I
RM
I
F = IC90, VGE = 0 V, -diF/dt = 240 A/ms10
15
A
t
rr
V
R = 360 V
T
J = 125ยฐC
150
ns
I
F = 1 A; -di/dt = 100 A/ms; VR = 30 V
T
J =25ยฐC35
50
ns
R
thJC
1K/W
Inductive load, T
J = 125ยฐC
I
C = IC90, VGE = 15 V,
L = 100
mH
V
CE = 0.8 VCES, RG = 4.7 W
Remarks: Switching times
may increase for
V
CE (Clamp) > 0.8 โ€ข VCES, higher
T
J or increased RG
Inductive load, T
J = 25ยฐC
I
C = IC90, VGE = 15 V, L = 100 mH,
V
CE = 0.8 VCES, RG = 4.7 W
Remarks: Switching times
may increase for
V
CE (Clamp) > 0.8 โ€ข VCES,
higher T
J or increased RG
IXSH 30N60U1
IXSH 30N60AU1
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025


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