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STP8NK85Z 데이터시트(PDF) 6 Page - STMicroelectronics |
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6 / 15 page Electrical characteristics STP8NK85Z - STF8NK85Z 6/15 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Source-drain current Source-drain current (pulsed) 6.7 26.7 A A VSD (2) 2. Pulse width limited by safe operating area Forward on voltage ISD = 6.7 A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse Recovery Charge Reverse Recovery Current ISD = 6.7 A, di/dt = 100 A/µs VDD = 35 V, Tj = 25°C (see Figure 20) 530 4.5 17 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.7 A, di/dt = 100 A/µs VDD = 35 V, Tj = 150°C (see Figure 20) 690 6.4 17 ns µC A |
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