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IRFP2907 데이터시트(PDF) 1 Page - International Rectifier |
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IRFP2907 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 1 page Parameter Description Min Typ. Max Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 75V ––– ––– VGS = 0V, ID = 250µA RDS(on)*** Static Drain-to-Source On-Resistance ––– 2.5m Ω 4.5m Ω VGS = 10V, ID = 110A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 20µA VDS = 75V, VGS = 0V, TJ = 25°C IGSS Gate-to-Source Leakage Current ––– ––– ± 200nA VGS = ±20V TJ Operating Junction and -55°C to 175°C Max. TSTG Storage Temperature Range Nominal Back Metal Composition, Thickness: Cr-NiV-Ag ( 1kA°-2kA°-5kA° ) Nominal Front Metal Composition, Thickness: 100% Al (0.008 mm) Dimensions: .257" x .360" [ 6.53 mm x 9.14 mm ] Wafer Diameter: 150 mm, with 100 flat Wafer Thickness: 0.254 mm ± 0.025 mm Relevant Die Mechanical Drawing Number 01-5403 Minimum Street Width 0.107 mm Reject Ink Dot Size 0.51 mm Diameter Minimum Recommended Storage Environment: Store in original container, in dessicated nitrogen, with no contamination Recommended Die Attach Conditions: For optimum electrical results, die attach temperature should not exceed 300 °C Reference Packaged Part IRFP2907 75V RDS(on) = 2.5mΩ (typ.)∗∗∗ 6" Wafer 10/4/00 Mechanical Data Die Outline Electrical Characteristics * IRFC2907B HEXFET® Power MOSFET Die in Wafer Form S D G www.irf.com 1 GAT E SOURCE SOURCE 6.53 [.257] 9.14 [.360] 0.508 [.020] 0.508 [.020] 5. UNL ES S OT HERWIS E NOT ED AL L DIE ARE GEN III < 1.270 T OL ERANCE = + /- 0.102 < [.050] T OL ERANCE = + /- [.004] > 1.270 T OL ERANCE = + /- 0.203 > [.050] T OL ERANCE = + /- [.008] LENGT H OVERALL DIE: WIDTH & NOT ES : 2. CONT ROL L ING DIMENS ION: [INCH]. 3. LETTER DES IGNAT ION: 4. DIMENS IONAL T OL ERANCES: 1. AL L DIMENS IONS ARE S HOWN IN MILL IMET ERS [INCHES ]. < 0.635 T OL ERANCE = + /- 0.013 < [.0250] T OLERANCE = + /- [.0005] > 0.635 T OL ERANCE = + /- 0.025 > [.0250] T OLERANCE = + /- [.0010] IS = CURRENT S ENS E SK = SOU RCE K ELVIN BONDING PADS : WIDTH LENGT H & S = SOURCE G = GAT E E = EMITT ER * Electrical characteristics are reported for the reference packaged part (see above) and can not be guaranteed in die sales form. Variations in customer packaging materials, dimensions and processes may affect parametric performance. ** Contact factory for these product forms. ***The typical RDS(on) is an estimated value for the bare die, actual results will depend on customer packaging materials and dimensions. l 100% Tested at Probe l Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack** l Ultra Low On-Resistance PD - 93777 |
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