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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRHY9130CM 데이터시트(PDF) 1 Page - International Rectifier |
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IRHY9130CM 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain Current -11 ID @ VGS = -12V, TC = 100°C Continuous Drain Current -7.0 IDM Pulsed Drain Current ➀ -44 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 150 mJ IAR Avalanche Current ➀ -11 A EAR Repetitive Avalanche Energy ➀ 7.5 mJ dv/dt Peak Diode Recovery dv/dt ➂ -16 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in (1.6mm)from case for 10s) Weight 4.3 (Typical) g PD - 91400C Pre-Irradiation International Rectifier’s RADHard HEXFET® technol- ogy provides high performance power MOSFETs for space applications. This technology has over a de- cade of proven performance and reliability in satellite applications. These devices have been character- ized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. oC A RADIATION HARDENED JANSR2N7382 POWER MOSFET THRU-HOLE (TO-257AA) 06/13/02 www.irf.com 1 100V, P-CHANNEL RAD Hard ™ HEXFET ® TECHNOLOGY TO-257AA Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHY9130CM 100K Rads (Si) 0.30 Ω -11A JANSR2N7382 IRHY93130CM 300K Rads (Si) 0.30 Ω -11A JANSF2N7382 Features: n Single Event Effect (SEE) Hardened n Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight For footnotes refer to the last page IRHY9130CM REF: MIL-PRF-19500/615 |
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유사한 설명 - IRHY9130CM |
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