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D291S45T 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

부품명 D291S45T
상세내용  Fast Recovery Diode
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제조사  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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D291S45T 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

   
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isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
1
D291S45T
Fast Recovery Diode
FEATURES
·
Full diffusion process,flat type ceramic tube package
·
Double sides cooling,High current
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
High power converters
·
AC/DC switching
·
Phase controlled rectifying
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VR
Repetitive Peak Reverse Voltage
4500
V
IF(AV)
Average Forward Current
TC=85℃
290
A
IFSM
Surge Forward Current
Tj=125℃
4500
A
TJ
Junction Temperature
-40~125
Tstg
Storage Temperature Range
-40~140
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.11
/W


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