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MVSMCGLCE36A 데이터시트(PDF) 3 Page - Microsemi Corporation |
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MVSMCGLCE36A 데이터시트(HTML) 3 Page - Microsemi Corporation |
3 / 4 page 1500 WATT LOW CAPACITANCE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR S C O T T S DA L E D I V I SI ON SMCGLCE6.5 thru SMCGLCE170A, e3 SMCJLCE6.5 thru SMCJLCE170A, e3 GRAPHS Test wave form parameterxs tr = 10 s tp = 1000 s tp – Pulse Time – sec FIGURE 2 PULSE WAVEFORM FIGURE 1 PEAK PULSE POWER vs. PULSE TIME T – Temperature – oC FIGURE 3 DERATING CURVE SCHEMATIC APPLICATIONS The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping voltage VC. The Microsemi recommended rectifier part number for the application in Figure 5 is the “SMBJLCR80” or “SMBGLCR80” depending on the terminal configuration desired. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including the reverse of each rectifier diode) is inherently provided in Figure 6. The unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4. Microsemi Scottsdale Division Page 3 Copyright 2005 6-06-2005 REV D FIGURE 4 FIGURE 5 FIGURE 6 TVS with internal low Optional Unidirectional Optional Bidirectional capacitance rectifier diode configuration (TVS and configuration (two TVS separate rectifier diode) devices in anti-parallel) in parallel) 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 |
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