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STD9N10 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STD9N10
상세설명  N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STD9N10 데이터시트(HTML) 3 Page - STMicroelectronics

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STD9N10/STD9N10-1
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)
Table 6. Off
Table 7. On (1)
Note: 1. Pulsed: Pulse duration = 300
µs, duty cycle 1.5 %
Table 8. Dynamic
Note: 1. Pulsed: Pulse duration = 300
µs, duty cycle 1.5 %
Table 9. Switching On
Table 10. Switching Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA; VGS = 0
100
V
IDSS
Zero Gate Voltage
VDS = Max Rating
250
µA
Drain Current (VGS = 0)
VDS = Max Rating x 0.8; Tc = 125 °C
1000
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS; ID = 250 µA2
3
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V; ID = 4.5 A
VGS = 10V; ID = 4.5 A; Tc = 100 °C
0.23
0.27
0.54
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
(1)
Forward
Transconductance
VDS > ID(on) x RDS(on)max; ID = 4.5 A
2
4
S
Ciss
Input Capacitance
VDS = 25 V; f = 1 MHz; VGS = 0
330
450
pF
Coss
Output Capacitance
90
120
pF
Crss
Reverse Transfer
Capacitance
25
40
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Time
VDD = 50 V; ID = 4.5 A; RG = 4.7 Ω
10
15
ns
tr
Rise Time
VGS = 10 V (see test circuit, Figure 22)
40
60
ns
(di/dt)on
Turn-on Current Slope
VDD = 80 V; ID = 9 A; RG = 4.7 Ω
VGS = 10 V (see test circuit, Figure 22)
440
A/
µs
Qg
Total Gate Charge
VDD = 80 V; ID = 9 A; VGS = 10 V
15
25
nC
Qgs
Gate-Source Charge
6
nC
Qgd
Gate-Drain Charge
5
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 80 V; ID = 9 A; RG = 4.7 Ω
15
25
ns
tf
Fall Time
VGS = 10 V (see test circuit, Figure 24)
25
35
ns
tc
Cross-over Time
50
70
ns


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