KMM5321200C2W datasheet(9/17 Pages) SAMSUNG

부품명	KMM5321200C2W

상세설명	1Mx32 DRAM SIMM (1MX16 Base)

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제조업체	SAMSUNG [Samsung semiconductor]

홈페이지	http://www.samsung.com/Products/Semiconductor

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9 / 17 page

DRAM MODULE

KMM5321200C2W/C2WG

Rev. 0.0 (Nov. 1997)

- 9 -

tWCS

WRITE CYCLE ( EARLY WRITE )

NOTE : DOUT = OPEN

RAS

VIH -

VIL -

CAS

VIH -

VIL -

A

VIH -

VIL -

W

VIH -

VIL -

VIH -

VIL -

DQ

COLUMN

ADDRESS

ROW

ADDRESS

tRAS

tRC

tCRP

tRP

tCSH

tRSH

tRCD

tCAS

tRAL

tRAD

tASR

tRAH

tASC

tCAH

tCRP

tWP

tDS

tDH

tWCH

tCWL

tRWL

Don

′t care

DATA-IN

Undefined

유사한 부품 번호 - KMM5321200C2W

제조업체	부품명	데이터시트	상세설명
Samsung semiconductor	KMM5321204C2W	286Kb / 17P	1Mx32 DRAM SIMM (1MX16 Base)
Samsung semiconductor	KMM5321204C2WG	286Kb / 17P	1Mx32 DRAM SIMM (1MX16 Base)

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유사한 설명 - KMM5321200C2W

제조업체	부품명	데이터시트	상세설명
Samsung semiconductor	KMM5321204C2W	286Kb / 17P	1Mx32 DRAM SIMM (1MX16 Base)
	KMM5322204C2W	287Kb / 17P	2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V
	KMM5322200C2W	280Kb / 17P	2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
	KMM5361203C2W	280Kb / 17P	1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
	KMM5361205C2W	289Kb / 17P	1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
	KMM5362205C2W	296Kb / 17P	2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
	KMM5362203C2W	284Kb / 17P	2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
White Electronic Design...	EDI416S4030A	1Mb / 27P	1Mx16 Bits x 4 Banks Synchronous DRAM
Hanbit Electronics Co.,...	HMD1M32M2EG	66Kb / 7P	4Mbyte(1Mx32) EDO Mode, 1K Refresh, 72Pin SIMM, 5V Design
Hanbit Electronics Co.,...	HMD1M32M2GL	223Kb / 7P	4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design

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KMM5321200C2W 데이터시트(PDF) 9 Page - Samsung semiconductor

KMM5321200C2W 데이터시트(HTML) 9 Page - Samsung semiconductor

유사한 부품 번호 - KMM5321200C2W

유사한 설명 - KMM5321200C2W

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