KMM5328004CSW datasheet(5/21 Pages) SAMSUNG

부품명	KMM5328004CSW

상세설명	8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V

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제조업체	SAMSUNG [Samsung semiconductor]

홈페이지	http://www.samsung.com/Products/Semiconductor

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DRAM MODULE

KMM5328004CSW/CSWG

* NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.

ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,

address can be changed maximum once within one EDO mode cycle time,

tHPC.

ABSOLUTE MAXIMUM RATINGS *

* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to

the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended

periods may affect device reliability.

Item

Symbol

Rating

Unit

Voltage on any pin relative to VSS

Voltage on VCC supply relative to VSS

Storage Temperature

Power Dissipation

Short Circuit Output Current

VIN, VOUT

VCC

Tstg

Pd

IOS

-1 to +7.0

-55 to +125

4

50

V

°C

W

mA

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70

°C)

*1 : VCC+2.0V at pulse width

≤20ns, which is measured at VCC.

*2 : -2.0V at pulse width

≤20ns, which is measured at VSS.

Item

Symbol

Min

Typ

Max

Unit

Supply Voltage

Ground

Input High Voltage

Input Low Voltage

VCC

VSS

VIH

VIL

4.5

0

2.4

-1.0*2

5.0

0

-

5.5

0

VCC

*1

0.8

V

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)

ICC1

ICC2

ICC3

ICC4

ICC5

ICC6

I(IL)

I(OL)

VOH

VOL

Symbol

Speed

KMM5328004CSW/CSWG

Unit

Min

Max

ICC1

-5

-6

-

244

224

mA

ICC2

Don

′t care

-

8

mA

ICC3

-5

-6

-

244

224

mA

ICC4

-5

-6

-

224

204

mA

ICC5

Don

′t care

-

4

mA

ICC6

-5

-6

-

244

224

mA

II(L)

IO(L)

Don

′t care

-10

10

uA

VOH

VOL

Don

′t care

2.4

-

0.4

V

: Operating Current * (RAS, CAS, Address cycling @

tRC=min)

: Standby Current (RAS=CAS=W=VIH)

: RAS Only Refresh Current * (CAS=VIH, RAS cycling @

tRC=min)

:Hyper Page Mode Current * (RAS=VIL, CAS cycling :

tHPC=min)

: Standby Current (RAS=CAS=W=Vcc-0.2V)

: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @

tRC=min)

: Input Leakage Current (Any input 0

≤VIN≤Vcc+0.5V, all other pins not under test=0 V)

: Output Leakage Current(Data Out is disabled, 0V

≤VOUT≤Vcc)

: Output High Voltage Level (IOH = -5mA)

: Output Low Voltage Level (IOL = 4.2mA)

유사한 부품 번호 - KMM5328004CSW

제조업체	부품명	데이터시트	상세설명
Samsung semiconductor	KMM5328004BSW	406Kb / 19P	8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
Samsung semiconductor	KMM5328004BSWG	406Kb / 19P	8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V

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유사한 설명 - KMM5328004CSW

제조업체	부품명	데이터시트	상세설명
Samsung semiconductor	KMM5328004BSW	406Kb / 19P	8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
	KMM5324004BSW	401Kb / 19P	4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
	KMM5324000BSW	357Kb / 18P	4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
	KMM5324004CSW	435Kb / 21P	4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
	KMM5328000CK	271Kb / 15P	8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
	KMM5368003BSW	365Kb / 18P	8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
	KMM53232004BK	420Kb / 19P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53216004CK	445Kb / 21P	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53232004CK	459Kb / 21P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53216000BK	364Kb / 18P	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

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KMM5328004CSW 데이터시트(PDF) 5 Page - Samsung semiconductor

KMM5328004CSW 데이터시트(HTML) 5 Page - Samsung semiconductor

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