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DLPC900 데이터시트(PDF) 67 Page - Texas Instruments |
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DLPC900 데이터시트(HTML) 67 Page - Texas Instruments |
67 / 83 page 67 DLPC900 www.ti.com DLPS037D – OCTOBER 2014 – REVISED MARCH 2019 Product Folder Links: DLPC900 Submit Documentation Feedback Copyright © 2014–2019, Texas Instruments Incorporated Layout Guidelines (continued) 10.1.4 Recommended MOSC Crystal Oscillator Configuration A recommended crystal oscillator configuration is shown in Figure 40. It is assumed that the external crystal oscillator will stabilize within 50 ms after stable power is applied. Table 14. Crystal Port Characteristics PARAMETER NOMINAL UNIT MOSC-to-GND capacitance 1.5 pF MOSCZ-to-GND capacitance 1.5 pF (1) Typical drive level with the XSA020000FK1H-OCX crystal (ESRmax = 40 Ω) = 50 µW Table 15. Recommended Crystal Configuration (1) PARAMETER RECOMMENDED UNIT Crystal circuit configuration Parallel resonant Crystal type Fundamental (first harmonic) Crystal nominal frequency 20 MHz Crystal temperature stability ± 30 PPM Crystal frequency tolerance (including accuracy, temperature, aging, and trim sensitivity) ± 100 PPM Crystal equivalent series resistance (ESR) 50 max Ω Crystal load 20 pF Crystal shunt load 7 max pF RS drive resistor (nominal) 100 Ω RFB feedback resistor (nominal) 1 MΩ CL1 external crystal load capacitor (MOSC) See Equation 1 pF CL2 external crystal load capacitor (MOSCN) See Equation 2 pF PCB layout A ground isolation ring around the crystal is recommended CL1 = 2 × (CL – CStray-MOSC) (1) CL2 = 2 × (CL – CStray-MOSCN (2) where • CL = Crystal load capacitance (Farads) • CStray-MOSC = Sum of package and PCB capacitance at the crystal pin associated with controller signal MOSC. • CStray-MOSCN = Sum of package and PCB capacitance at the crystal pin associated with controller signal MOSCN. (3) |
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