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IRFB42N20D 데이터시트(PDF) 2 Page - International Rectifier |
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IRFB42N20D 데이터시트(HTML) 2 Page - International Rectifier |
2 / 6 page IRFB/IRFS/IRFSL42N20D 2 www.irf.com PROVISIONAL Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance TBD ––– ––– SVDS = 25V, ID = 25.5A Qg Total Gate Charge ––– 103 ––– ID = 25.5A Qgs Gate-to-Source Charge ––– 26 ––– nC VDS = 160V Qgd Gate-to-Drain ("Miller") Charge ––– 48 ––– VGS = 10V td(on) Turn-On Delay Time ––– TBD ––– VDD = 100V tr Rise Time ––– TBD ––– ID = 25.5A td(off) Turn-Off Delay Time ––– TBD ––– RG = TBDΩ tf Fall Time ––– TBD ––– VGS = 10V Ciss Input Capacitance ––– 3470 ––– VGS = 0V Coss Output Capacitance ––– 560 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 120 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– TBD ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– TBD ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– TBD ––– VGS = 0V, VDS = 0V to 160V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– TBD mJ IAR Avalanche Current ––– 25.5 A EAR Repetitive Avalanche Energy ––– 30 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25.5A, VGS = 0V trr Reverse Recovery Time ––– TBD TBD ns TJ = 25°C, IF = 25.5A Qrr Reverse RecoveryCharge ––– 2.4 3.6 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 42.6 170 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– TBD ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.055 Ω VGS = 10V, ID = 25.5A VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 200V, VGS = 0V ––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V IGSS IDSS Drain-to-Source Leakage Current Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.5 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient ––– 40 |
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