전자부품 데이터시트 검색엔진 |
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IRHQ54110 데이터시트(PDF) 2 Page - International Rectifier |
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IRHQ54110 데이터시트(HTML) 2 Page - International Rectifier |
2 / 8 page IRHQ57110 Pre-Irradiation 2 www.irf.com For footnotes refer to the last page Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 4.6 ISM Pulse Source Current (Body Diode) ➀ — — 18.4 VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 4.6A, VGS = 0V ➃ trr Reverse Recovery Time — — 173 nS Tj = 25°C, IF = 4.6A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 863 nC VDD ≤ 25V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.31 VGS = 12V, ID = 4.6A Resistance — — 0.27 VGS = 12V, ID = 2.9A VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA gfs Forward Transconductance 3.3 — — S ( )VDS > 15V, IDS = 2.9A ➃ IDSS Zero Gate Voltage Drain Current — — 10 VDS= 80V, VGS=0V —— 25 VDS = 80V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 13 VGS = 12V, ID = 4.6A Qgs Gate-to-Source Charge — — 4.0 nC VDS = 50V Qgd Gate-to-Drain (‘Miller’) Charge — — 3.9 td(on) Turn-On Delay Time — — 20 VDD = 50V, ID = 4.6A, tr Rise Time — — 24 VGS = 12V, RG = 7.5Ω td(off) Turn-Off Delay Time — — 32 tf Fall Time — — 90 LS + LD Total Inductance — 6.1 — Ciss Input Capacitance — 371 — VGS = 0V, VDS = 25V Coss Output Capacitance — 108 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 3.0 — nA ➃ nH ns µA Measured from the center of drain pad to center of source pad Ω Note: Corresponding Spice and Saber models are available on the G&S Website. Thermal Resistance (Per Die) Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 11.8 RthJA Junction-to-Ambient — — 60 Typical socket mount °C/W |
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