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QJ8012XHX 데이터시트(PDF) 2 Page - Littelfuse

부품명 QJ8012XHX
상세설명  12 Amp High Temperature Alternistor Triacs
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Revised: 07/18/19
Specifications are subject to change without notice.
©2019 Littelfuse, Inc
Thyristors
12 Amp High Temperature Alternistor Triacs
QJ8012xHx Series
Electrical Characteristics (T
J = 25°C, unless otherwise specified) — Alternistor Triac (3 Quadrants)
Symbol
Test Conditions
Quadrant
QJxx12xH4
QJxx12H5
Unit
I
GT
V
D = 12V RL = 60 Ω
I – II – III
MAX.
35
50
mA
V
GT
V
D = 12V RL = 60 Ω
I – II – III
MAX.
1.3
1.3
V
V
GD
V
D = VDRM RL = 3.3 kΩ TJ = 150°C
I – II – III
MIN.
0.2
0.2
V
I
H
I
T = 100mA
MAX.
40
50
mA
dv/dt
V
D = VDRM Gate Open TJ = 150°C
MIN.
450
700
V/μs
V
D = 67% VDRM Gate Open TJ = 100°C
600
1000
(dv/dt)c
(di/dt)c = 6.5 A/ms T
J = 150°C
MIN.
2
30
V/μs
t
gt
I
G = 2 x IGT
PW = 15μs I
T = 17.0 A(pk)
TYP.
7(TBD)
9 (TBD)
μs
Absolute Maximum Ratings — Alternistor (3 Quadrants)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
QJxx12LHy
T
C = 120°C
12
A
QJxx12RHy
QJxx12NHy
T
C = 132°C
I
TSM
Non repetitive surge peak on-state current
(full cycle, T
J initial = 25°C)
f = 50 Hz
t = 20 ms
110
A
f = 60 Hz
t = 16.7 ms
120
I2t
I2t Value for fusing
t
p = 8.3 ms
60
A2s
di/dt
Critical rate of rise of on-state current
f = 60 Hz
T
J = 150°C
70
A/μs
I
GTM
Peak gate trigger current
t
p = 20 μs
T
J = 150°C
4
A
P
G(AV)
Average gate power dissipation
T
J = 150°C
0.5
W
T
stg
Storage temperature range
-40 to 150
°C
T
J
Operating junction temperature range
-40 to 150
°C
V
DSM/VRSM
Peak non-repetitive blocking voltage
Pulse Width = 100μs
V
DRM/VRRM+200
V
Note: xx = voltage/10, y = sensitivity
Static Characteristics
Symbol
Test Conditions
Value
Unit
V
TM
I
TM = 17.0A tp = 380 µs
MAX.
1.60
V
I
DRM
I
RRM
V
D = VDRM / VRRM
T
J = 25°C
MAX.
10
μA
T
J = 150°C
3
mA
Thermal Resistances
Symbol
Parameter
Value
Unit
R
θ(JC)
Junction to case (AC)
QJxx12RHy
QJxx12NHy
1.2
°C/W
QJxx12LHy
2.3
R
θ(J-A)
Junction to ambient (AC)
QJxx12RHy
45
°C/W
QJxx12LHy
90
Note: xx = voltage/10, y = sensitivity


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