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SB10150L 데이터시트(HTML) 1 Page - Microdiode Electronics (Jiangsu) Co.,Ltd.

부품명 SB10150L
상세내용  SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
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제조사  CHENDA [Microdiode Electronics (Jiangsu) Co.,Ltd.]
홈페이지  http://www.microdiode.com/en
Logo CHENDA - Microdiode Electronics (Jiangsu) Co.,Ltd.

SB10150L 데이터시트(HTML) 1 Page - Microdiode Electronics (Jiangsu) Co.,Ltd.

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DN:T19726A0
https://www.microdiode.com
Rev:2019A0
Page :1
Reverse Voltage - 45 to 200 Volts Forward Current -10.0 Ampere
SB1045L THRU SB10200L
Mechanical Data
Features
Schottky Barrier Chip
High Thermal Reliability
Patented Super Barrier Rectifier Technology
High Forward Surge Capability
Ultra Fow Power Loss,High Efficiency
Excellent High temperature Stability
Plastic material-UL flammability 94V-0
Case : JEDEC TO-277 Molded plastic body
Terminals :Plated Leads Solderable per MIL-STD-202,Method 208
Polarity : Polarity symbol marking on body
Mounting Position: Any
Weight : 0.003 ounce, 0.092 grams
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Maximum Ratings And Electrical Characteristics
Dimensions in inches and (millimeters)
TO-277
Parameter
SYMBOLS
SB
1045L
SB
1050L
SB
1060L
SB
1080L
SB
10100L
SB
10150L
SB
10200L
UNIT
Marking Code
MDD
SB
1045L
MDD
SB
1050L
MDD
SB
1060L
MDD
SB
1080L
MDD
SB
10100L
MDD
SB
10150L
MDD
SB
10200L
Maximum repetitive peak reverse voltage
VRRM
45
50
60
80
100
150
200
V
Maximum working peak reverse voltage
VRWM
Maximum DC blocking voltage
VDC
RMS Reverse voltage
VRMS
32
35
42
56
70
105
140
V
Average Rectified Output Current
I(O)
10
A
Non-Repetitive Peak Forward Surge8.3ms
Single Half Sine-Wave Superimposed on
rated load(JEDEC Method)
IFSM
150
A
Forward Voltage Drop at 10.0A
TA=25℃
VF
0.55
0.70
0.85
0.90
0.92
V
TA=25℃
Peak reverse curent
at rated DC blocking voltage
TA=125℃
IR
0.3
15
mA
Typical thermal resistance
Junctionto Ambient
RθJA
RθJL
80
15
℃/W
Operating junction and storage temperature range TJ,TSTG
-55 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A.
2.P.C.B. mounted with 2.0x2.0”(5.0x5.0cm) copper pad areas.
3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
4.The typical data above is for referenceonly.


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