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IRFP4232PBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP4232PBF
상세설명  PDP MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP4232PBF 데이터시트(HTML) 2 Page - International Rectifier

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IRFP4232PbF
2
www.irf.com
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
250
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
180
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
30
35.7
m
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-15
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
5.0
µA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
95
–––
–––
S
Qg
Total Gate Charge
–––
160
240
nC
Qgd
Gate-to-Drain Charge
–––
60
–––
tst
Shoot Through Blocking Time
100
–––
–––
ns
EPULSE
Energy per Pulse
µJ
Ciss
Input Capacitance
–––
7290
–––
Coss
Output Capacitance
–––
610
–––
pF
Crss
Reverse Transfer Capacitance
–––
240
–––
Coss eff.
Effective Output Capacitance
–––
420
–––
LD
Internal Drain Inductance
–––
5.0
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
13
–––
from package
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
EAR
Repetitive Avalanche Energy
c
mJ
VDS(Avalanche)
Repetitive Avalanche Voltage
c
V
IAS
Avalanche Current
d
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS @ TC = 25°C Continuous Source Current
–––
–––
60
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
240
(Body Diode)
c
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
240
360
ns
Qrr
Reverse Recovery Charge
–––
1230 1850
nC
MOSFET symbol
VDS = 25V, ID = 42A
VDD = 125V, ID = 42A, VGS = 10V
e
Conditions
and center of die contact
VDD = 200V, VGS = 15V, RG= 4.7Ω
VDS = 200V, RG= 4.7Ω, TJ = 25°C
L = 220nH, C= 0.4µF, VGS = 15V
VDS = 200V, RG= 4.7Ω, TJ = 100°C
VDS = 25V
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VGS = 0V, VDS = 0V to 200V
VDS = 200V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 0V
L = 220nH, C= 0.4µF, VGS = 15V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 42A
e
TJ = 25°C, IF = 42A, VDD = 50V
di/dt = 100A/µs
e
TJ = 25°C, IS = 42A, VGS = 0V
e
showing the
integral reverse
p-n junction diode.
Typ.
Max.
ƒ = 1.0MHz,
See Fig.9
–––
220
43
42
–––
–––
300
–––
–––
310
–––
–––
950
–––


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