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BAP55L 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BAP55L 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 9397 750 14811 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Preliminary data sheet Rev. 01 — 5 April 2005 2 of 8 Philips Semiconductors BAP55L Silicon PIN diode 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics Table 3: Marking Type number Marking code BAP55L E6 Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 50 V IF forward current - 100 mA Ptot total power dissipation Ts = 90 °C - 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Table 5: Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-sp) thermal resistance from junction to soldering point 100 K/W Table 6: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 50 mA - 0.95 1.1 V IR reverse current VR =20V - - 10 nA VR =50V - - 0.1 µA Cd diode capacitance f = 1 MHz; Figure 2 VR = 0 V - 0.27 - pF VR = 1 V - 0.23 - pF VR = 20 V - 0.18 0.28 pF rD diode forward resistance f = 100 MHz; Figure 1 IF = 0.5 mA - 3.4 4.5 Ω IF = 1 mA - 2.3 3.3 Ω IF = 10 mA - 0.8 1.2 Ω IF = 100 mA - 0.4 0.7 Ω |
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