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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Preliminary data sheet

Rev. 01 — 5 April 2005

2 of 8

Philips Semiconductors

BAP55L

Silicon PIN diode

4.

Marking

5.

Limiting values

6.

Thermal characteristics

7.

Characteristics

Table 3:

Marking

Type number

Marking code

BAP55L

E6

Table 4:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

reverse voltage

-

50

V

forward current

-

100

mA

total power dissipation

-

500

mW

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

Table 5:

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction

to soldering point

100

K/W

Table 6:

Characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

-

0.95

1.1

V

reverse current

-

-

10

nA

-

-

0.1

µA

diode capacitance

f = 1 MHz; Figure 2

-

0.27

-

pF

-

0.23

-

pF

-

0.18

0.28

pF

diode forward

resistance

f = 100 MHz; Figure 1

-

3.4

4.5

Ω

-

2.3

3.3

Ω

-

0.8

1.2

Ω

-

0.4

0.7

Ω