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DF5A6.8F ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Toshiba Semiconductor

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์ƒ์„ธ๋‚ด์šฉ  TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
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์ œ์กฐ์‚ฌ  TOSHIBA [Toshiba Semiconductor]
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DF5A6.8F
2004-11-08
1
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF5A6.8F
Diodes for Protecting against ESD
โ€ข The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
โ€ข The zener voltage corresponds to the E24 Series.
Maximum Ratings (Ta = 25
ยฐC)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
200
MW
Junction temperature
Tj
125
ยฐC
Storage temperature range
Tstg
โˆ’55~125
ยฐC
Electrical Characteristics (Ta = 25
ยฐC)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Zener voltage
VZ
IZ = 5 mA
6.4
6.8
7.2
V
Dynamic impedance
ZZ
IZ = 5 mA
โ€•
10
25
โ„ฆ
Knee dynamic impedance
ZZK
IZ = 0.5 mA
โ€•
30
โ€•
โ„ฆ
Reverse current
IR
VR = 5 V
โ€•
โ€•
0.5
ยตA
Terminal capacitance
(between Cathode and Anode)
CT
VR = 0, f = 1 MHz
โ€•
45
โ€•
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
ยฑ 30kV
Criterion: No damage to device elements
Marking
Equivalent Circuit (Top View)
JEDEC
โ€•
JEITA
โ€•
TOSHIBA
1-3H1A
Weight: 0.014 g (typ.)
Unit: mm


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