전자부품 데이터시트 검색엔진 |
|
FDS6673AZ 데이터시트(PDF) 4 Page - Fairchild Semiconductor |
|
FDS6673AZ 데이터시트(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page 4 www.fairchildsemi.com FDS6673AZ Rev. C(W) Typical Characteristics 0 2 4 6 8 10 010 20 304050 60708090 Q g, GATE CHARGE (nC) I D = -14.5A V DS = -10V -15V -20V 0 1000 2000 3000 4000 5000 6000 05 10 15 20 25 30 -V DS, DRAIN TO SOURCE VOLTAGE (V) C ISS C OSS C RSS f = 1 MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -V DS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 100 µs R DS(ON) LIMIT V GS = -10V SINGLE PULSE RθJA = 125°C/W T A = 25°C 10ms 1ms 10s 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) SINGLE PULSE RθJA = 125°C/W T A = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA (t) = r(t) * RθJA RθJA = 125 °C/W TJ - TA = P * RθJA (t) Duty Cycle, D = t1/t2 P(pk) SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. t1 t2 |
유사한 부품 번호 - FDS6673AZ |
|
유사한 설명 - FDS6673AZ |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |