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FDS6990AS_NL 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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FDS6990AS_NL 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com March 2005 FDS6990AS Rev. A FDS6990AS Dual 30V N-Channel PowerTrench® SyncFET™ Features ■ 7.5 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V ■ Includes SyncFET Schottky diode ■ Low gate charge (10nC typical) ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability Applications ■ DC/DC converter ■ Motor drives General Description The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power sup- plies. This 30V MOSFET is designed to maximize power con- version efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using Fair- child’s monolithic SyncFET technology. The performance of the FDS6990AS as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode. Absolute Maximum Ratings TA=25°C unless otherwise noted Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 7.5 A – Pulsed 20 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Device Marking Device Reel Size Tape width Quantity FDS6990AS FDS6990AS 13" 12mm 2500 units FDS6990AS FDS6990AS_NL (Note 4) 13" 12mm 2500 units D2 D2 D1 D1 S2 G2 S1 G1 Pin 1 SO-8 4 5 3 6 2 7 1 8 Q1 Q2 |
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