MW4IC915N datasheet(1/18 Pages) NXP

부품명	MW4IC915N

상세설명	RF LDMOS Wideband Integrated Power Amplifiers

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MW4IC915NBR1 MW4IC915GNBR1

1

RF Device Data

Freescale Semiconductor

RF LDMOS Wideband Integrated

Power Amplifiers

The MW4IC915NB/GNB wideband integrated circuit is designed for GSM

and GSM EDGE base station applications. It uses Freescale’s newest High

Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi--stage

structure. Its wideband On--Chip design makes it usable from 750 to 1000 MHz.

The linearity performances cover all modulations for cellular applications: GSM,

GSM EDGE, TDMA, N--CDMA and W--CDMA.

Final Application

• Typical Performance: VDD =26 Volts,IDQ1 =60 mA, IDQ2 = 240 mA,

Pout = 15 Watts CW, Full Frequency Band (860--960 MHz)

Power Gain — 30 dB

Power Added Efficiency — 44%

Driver Application

• Typical GSM/GSM EDGE Performances: VDD =26 Volts,IDQ1 =60 mA,

IDQ2 = 240 mA, Pout = 3 Watts Avg., Full Frequency Band (869--894 MHz

and 921--960 MHz)

Power Gain — 31 dB

Power Added Efficiency — 19%

Spectral Regrowth @ 400 kHz Offset = --65 dBc

Spectral Regrowth @ 600 kHz Offset = --83 dBc

EVM — 1.5%

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)

• Integrated Quiescent Current Temperature Compensation with

Enable/Disable Function

• On--Chip Current Mirror gm Reference FET for Self Biasing Application(1)

• Integrated ESD Protection

• 200°C Capable Plastic Package

• N Suffix Indicates Lead--Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.

1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1987.

MW4IC915N

Rev. 8, 3/2011

Freescale Semiconductor

Technical Data

860 -- 960 MHz, 15 W, 26 V

GSM/GSM EDGE, N--CDMA

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

CASE 1329--09

TO--272 WB--16

PLASTIC

MW4IC915NBR1

MW4IC915GNBR1

CASE 1329A--04

TO--272 WB--16 GULL

PLASTIC

MW4IC915GNBR1

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

(Top View)

GND

VRD1

RFin

VGS1

GND

VRD2

RFout/

VDS2

GND

VGS2

GND

VRG2

VDS1

VRG1

NC

VGS1

RFin

VDS1

VGS2

VDS2/RFout

Quiescent Current

Temperature Compensation

VRD2

VRG2

2

3

4

5

6

7

8

16

15

14

13

12

9

10

11

1

Note: Exposed backside flag is source

terminal for transistors.

VRD1

VRG1

유사한 부품 번호 - MW4IC915N

제조업체	부품명	데이터시트	상세설명
Motorola, Inc	MW4IC915NBR1	334Kb / 16P	RF LDMOS Wideband Integrated Power Amplifiers
Freescale Semiconductor...	MW4IC915NBR1	686Kb / 20P	RF LDMOS Wideband Integrated Power Amplifiers
Freescale Semiconductor...	MW4IC915NBR1	686Kb / 20P	RF LDMOS Wideband Integrated Power Amplifiers

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유사한 설명 - MW4IC915N

제조업체	부품명	데이터시트	상세설명
Motorola, Inc	MW4IC2230	660Kb / 12P	RF LDMOS Wideband Integrated Power Amplifiers
Freescale Semiconductor...	MW7IC3825NR1	808Kb / 23P	RF LDMOS Wideband Integrated Power Amplifiers
Freescale Semiconductor...	MDE6IC7120NR1	512Kb / 18P	RF LDMOS Wideband Integrated Power Amplifiers
NXP Semiconductors	MMRF2007N	403Kb / 17P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 0, 6/2015
	MD7IC2012N	351Kb / 19P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 0, 4/2013
	A2I25H060N	1Mb / 31P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 0, 1/2016
Freescale Semiconductor...	MD7IC2251N	722Kb / 17P	RF LDMOS Wideband Integrated Power Amplifiers
	MW7IC2725NR1	960Kb / 24P	RF LDMOS Wideband Integrated Power Amplifiers
	MW7IC3825NR1	1Mb / 23P	RF LDMOS Wideband Integrated Power Amplifiers
NXP Semiconductors	MDE6IC7120N	576Kb / 18P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 0, 10/2009
NXP Semiconductors	MW4IC2020N	693Kb / 16P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 9, 5/2006

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