2

RF Device Data

Freescale Semiconductor

MW4IC2020MBR1 MW4IC2020GMBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +65

Vdc

Gate-Source Voltage

-0.5, +15

Vdc

Storage Temperature Range

-65 to +175

°C

Operating Junction Temperature

200

°C

Input Power

20

dBm

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Stage 1

Stage 2

Stage 3

10.5

5.1

2.3

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

2 (Minimum)

Machine Model

M3 (Minimum)

Charge Device Model

C5 (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

3

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Power Gain

27

29

—

dB

Drain Efficiency

f1 = 1805 MHz, f2 = 1805.1 MHz

f1 = 1990 MHz, f2 = 1990.1 MHz

24

18

26

20

—

%

Input Return Loss

IRL

—

—

-10

dB

Intermodulation Distortion

IMD

—

-32

-27

dBc

1805 MHz<Frequency<1990 MHz, 1-Tone

Saturated Pulsed Output Power

(f = 1 kHz, Duty Cycle 10%)

—

33

—

W

—

±5

—

%

—

0.15

—

dB

1805-1880 MHz

1930-1990 MHz

Φ

—

±0.5

±0.2

—

°

Delay

—

1.8

—

ns

ΦΔ

—

±10

—

°

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select

Documentation/Application Notes - AN1977.

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