August 2005

©2005 Fairchild Semiconductor Corporation

FDS8960C Rev C(W)

www.fairchildsemi.com

FDS8960C

General Description

These dual N- and P-Channel enhancement mode

power field effect transistors are produced using

Fairchild

Semiconductor’s

advanced

PowerTrench

process that has been especially tailored to minimize

on-state ressitance and yet maintain superior switching

performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

•

Q1:

N-Channel

7.0A, 35V

R

R

•

Q2:

P-Channel

–5A, –35V

R

R

•

Fast switching speed

•

RoHS compliant

S

D

S

S

SO-8

D

D

D

G

D1

D1

D2

D2

S1

G1

S2

G2

Pin 1

SO-8

4

3

2

1

5

6

7

8

Q1

Q2

A

= 25°C unless otherwise noted

Symbol

Parameter

Q1

Q2

Units

Drain-Source Voltage

35

–35

V

Gate-Source Voltage

±20

±25

V

Drain Current

- Continuous

(Note 1a)

7

–5

A

- Pulsed

20

–20

Power Dissipation for Dual Operation

2

W

Power Dissipation for Single Operation

(Note 1a)

1.6

(Note 1b)

1

(Note 1c)

0.9

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

78

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

40

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS8960C

FDS8960C

13”

12mm

2500 units