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FDW2601NZ_NL 데이터시트(PDF) 8 Page - Fairchild Semiconductor |
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FDW2601NZ_NL 데이터시트(HTML) 8 Page - Fairchild Semiconductor |
8 / 11 page FDW2601NZ Rev. A www.fairchildsemi.com 8 PSPICE Electrical Model .SUBCKT FDW2601NZ 2 1 3 ; rev June 2004 CA 12 8 19.3e-10 CB 15 14 19.3e-10 CIN 6 8 1.7e-9 DBODY 5 7 DBODYMOD DBREAK 7 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD DESD1 91 9 DESD1MOD DESD2 91 7 DESD2MOD EBREAK 5 11 17 18 33.3 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 8 6 1 EVTHRES 6 21 19 8 1 EVTEMP 6 20 18 22 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 0.96e-9 LSOURCE 3 7 0.19e-9 RLDRAIN 2 5 10 RLGATE 1 9 9.6 RLSOURCE 3 7 1.9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 8.8e-3 RGATE 9 20 2.75 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 3e-4 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*120),2.5))} .MODEL DBODYMOD D (IS = 18.6e-12 N=0.93 RS = 6.6e-3 IKF=0.2 TRS1 = 1.7e-3 TRS2 = 2e-6 XTI=0.1 TIKF=0.001 CJO =5.2e-10 TT=8.7e-9 M = 0.58) .MODEL DBREAKMOD D (RS = 1e-1 TRS1 = 9e-3 TRS2 = -2e-5) .MODEL DPLCAPMOD D (CJO = 0.76e-9 IS = 1e-30 N = 10 M = 0.58) .MODEL DESD1MOD D (BV=10.5 TBV1=-0.0018 N=9.4 RS=5) .MODEL DESD2MOD D (BV=10.5 TBV1=-0.0018 N=9.4 RS=5) .MODEL MMEDMOD NMOS (VTO = 1.0 KP = 1.7 IS=1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.75) .MODEL MSTROMOD NMOS (VTO = 1.27 KP = 147 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 0.83 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 27.5 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 8.8e-4 TC2 = -13e-7) .MODEL RDRAINMOD RES (TC1 = 1e-9 TC2 = 1e-5) .MODEL RSLCMOD RES (TC1 = 2e-9 TC2 = 5e-8) .MODEL RSOURCEMOD RES (TC1 = 8.2e-2 TC2 = 1e-6) .MODEL RVTHRESMOD RES (TC1 = -13e-4 TC2 = -2.8e-6) .MODEL RVTEMPMOD RES (TC1 = -1.3e-3 TC2 = 1e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6 VOFF= -1.5) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF= -6) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0.3) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.3 VOFF= -0.5) ENDS Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. + - 6 8 + - 5 51 19 8 + - 17 18 6 8 + - 5 8 + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 19 22 12 13 15 S1A S1B S2A S2B CA CB EGS EDS 14 8 13 8 14 13 MWEAK EBREAK DBODY RSOURCE SOURCE 11 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 16 21 8 MMED MSTRO DRAIN 2 LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 10 5 51 50 RSLC2 1 GATE RGATE EVTEMP 9 ESG LGATE RLGATE 20 + - + - + - 18 22 DESD1 DESD2 91 6 |
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