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MC74HC4316 데이터시트(HTML) 2 Page - ON Semiconductor

부품명 MC74HC4316
상세내용  Quad Analog Switch/Multiplexer/Demultiplexer with Separate Analog and Digital Power Supplies
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MC74HC4316 데이터시트(HTML) 2 Page - ON Semiconductor

 
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MC74HC4316
MOTOROLA
High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC
Positive DC Supply Voltage
(Ref. to GND)
(Ref. to VEE)
– 0.5 to + 7.0
– 0.5 to + 14.0
V
VEE
Negative DC Supply Voltage (Ref. to GND)
– 7.0 to + 0.5
V
VIS
Analog Input Voltage
VEE – 0.5
to VCC + 0.5
V
Vin
DC Input Voltage (Ref. to GND)
– 1.5 to VCC + 1.5
V
I
DC Current Into or Out of Any Pin
± 25
mA
PD
Power Dissipation in Still Air
Plastic DIP†
SOIC Package†
750
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
_C
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/
_C from 65_ to 125_C
SOIC Package: – 7 mW/
_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
Positive DC Supply Voltage (Ref. to GND)
2.0
6.0
V
VEE
Negative DC Supply Voltage (Ref. to GND)
– 6.0
GND
V
VIS
Analog Input Voltage
VEE
VCC
V
Vin
Digital Input Voltage (Ref. to GND)
GND
VCC
V
VIO*
Static or Dynamic Voltage Across Switch
1.2
V
TA
Operating Temperature, All Package Types
– 55
+ 125
_C
tr, tf
Input Rise and Fall Time
VCC = 2.0 V
(Control or Enable Inputs)
VCC = 4.5 V
(Figure 10)
VCC = 6.0 V
0
0
0
1000
500
400
ns
* For voltage drops across the switch greater than 1.2 V (switch on), excessive VCC current may
be drawn; i.e., the current out of the switch may contain both VCC and switch input components.
The reliability of the device will be unaffected unless the Maximum Ratings are exceeded.
DC ELECTRICAL CHARACTERISTICS Digital Section (Voltages Referenced to GND) VEE = GND Except Where Noted
Symbol
Parameter
Test Conditions
VCC
V
Guaranteed Limit
Unit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25
_C
v 85_C
v 125_C
Unit
VIH
Minimum High–Level Voltage,
Control or Enable Inputs
Ron = Per Spec
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
VIL
Maximum Low–Level Voltage,
Control or Enable Inputs
Ron = Per Spec
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
Iin
Maximum Input Leakage
Current, Control or Enable
Inputs
Vin = VCC or GND
VEE = – 6.0 V
6.0
± 0.1
± 1.0
± 1.0
µA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
VIO = 0 V
VEE = GND
VEE = – 6.0
6.0
6.0
2
8
20
80
40
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND
v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
I/O pins must be connected to a
properly terminated line or bus.


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