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AM42BDS640AG 데이터시트(PDF) 69 Page - SPANSION

부품명 AM42BDS640AG
부품 상세설명  Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
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AM42BDS640AG 데이터시트(HTML) 69 Page - SPANSION

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Am42BDS640AG
November 1, 2002
P R E L I M INARY
FLASH ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 2.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°C, V
CC = 1.8 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
14 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
FLASH LATCHUP CHARACTERISTICS
Note: Includes all pins except V
CC. Test conditions: VCC = 3.0 V, one pin at a time.
PACKAGE PIN CAPACITANCE
Note:Test conditions T
A = 25°C, f = 1.0 MHz.
FLASH DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time (32 Kword or 8 Kword)
0.4
5
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
54
sec
Word Program Time
11.5
210
µs
Excludes system level
overhead (Note 5)
Accelerated Word Program Time
4
120
µs
Chip Program Time (Note 3)
48
144
sec
Accelerated Chip Program Time
16
48
sec
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS on all I/O pins
–1.0 V
V
CC + 1.0 V
V
CC Current
–100 mA
+100 mA
Parameter
Symbol
Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN = 0
11
14
pF
C
OUT
Output Capacitance
V
OUT = 0
12
16
pF
C
IN2
Control Pin Capacitance
V
IN = 0
14
16
pF
C
IN3
WP#/ACC Pin Capacitance
V
IN = 0
17
20
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C10
Years
125
°C20
Years


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