©2004 Fairchild Semiconductor Corporation

Rev. A, March 2004

FQA16N25C

250V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters,

switch mode power supplies, DC-AC converters for

uninterrupted power supplies and motor controls.

Features

• Low gate charge ( typical 41 nC)

• Low Crss ( typical 68 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Thermal Characteristics

Symbol

Parameter

FQA16N25C

Units

Drain-Source Voltage

250

V

Drain Current

17.8

A

11.3

A

Drain Current

- Pulsed

(Note 1)

71.2

A

Gate-Source Voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

410

mJ

Avalanche Current

(Note 1)

17.8

A

Repetitive Avalanche Energy

(Note 1)

18.0

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

5.5

V/ns

180

W

- Derate above 25°C

1.45

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Case

--

0.69

°C/W

Thermal Resistance, Case-to-Sink Typ.

0.24

--

°C/W

Thermal Resistance, Junction-to-Ambient

--

40

°C/W

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S

D

G

TO-3P

FQA Series

GS

D