1SS181 datasheet(1/2 Pages) LUGUANG

부품명	1SS181

부품 상세설명	Switching Diodes

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Low forward voltage

: VF(3)=0.92V(typ.)

Fast reverse recovery time : trr=1.6ns(typ.)

1. CATHODE

MARKING: A3

2. CATHODE

3. ANODE

Maximum Ratings @TA=25

℃

Parameter

Symbol

Limits

Unit

Non-Repetitive Peak reverse voltage

VRM

85

V

DC Blocking

Voltage

VR

80

V

Forward Continuous Current

IFM

300

mA

Average Rectified Output Current

IO

100

mA

Power Dissipation

PD

150

mW

Junction temperature

TJ

125

℃

Storage temperature range

TSTG

-55-125

℃

Electrical Characteristics @TA=25

℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Reverse Breakdown Voltage

V (BR)R

80

V

IR=100μA

VF1

0.61

V

IF=1mA

VF2

0.74

V

IF=10mA

Forward voltage

VF3

0.92

1.2

V

IF=100mA

IR1

0.1

uA

VR=30V

Reverse current

IR2

0.5

uA

VR=80V

Capacitance between terminals

CT

2.2

4.0

pF

VR=0,f=1MHz

Reverse recovery time

t r r

1.6

4.0

ns

IF=IR=10mA,Irr=0.1×IR

1SS181

Switching Diodes

Features

Dimensions in inches and (millimeters)

SOT-23

ht

t

p

:

//

www.lgesemi.com

mail:lge@lgesemi.com

Revision:201

70701-P1

유사한 부품 번호 - 1SS181

제조업체	부품명	데이터시트	부품 상세설명
Toshiba Semiconductor	1SS181	130Kb / 2P	DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
Kwang Myoung I.S. CO.,L...	1SS181	60Kb / 1P	SOT-23 Plastic-Encapsulate Diodes
SHENZHEN SLS TECHNOLOGY...	1SS181	208Kb / 2P	Plastic-Encapsulate Diodes
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SHENZHEN YONGERJIA INDU...	1SS181	147Kb / 2P	SOT-23 Plastic-Encapsulate DIODE

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1SS181 데이터시트(PDF) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd

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유사한 부품 번호 - 1SS181

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