전자부품 데이터시트 검색엔진 |
|
FQP6N50C 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
|
FQP6N50C 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page 2 www.fairchildsemi.com FQP6N50C Rev. A Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 18mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 5.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Device Marking Device Package Reel Size Tape Width Quantity FQP6N50C FQP6N50C TO-220 -- -- 50 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.8 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 µA VDS = 400 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.8 A -- 1.0 1.2 Ω gFS Forward Transconductance VDS = 40 V, ID = 2.8 A (Note 4) -- 4.5 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 540 700 pF Coss Output Capacitance -- 80 105 pF Crss Reverse Transfer Capacitance -- 15 20 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 250 V, ID = 5.5 A, RG = 25 Ω (Note 4, 5) -- 10 30 ns tr Turn-On Rise Time -- 35 80 ns td(off) Turn-Off Delay Time -- 55 120 ns tf Turn-Off Fall Time -- 45 100 ns Qg Total Gate Charge VDS = 400 V, ID = 5.5 A, VGS = 10 V (Note 4, 5) -- 19 25 nC Qgs Gate-Source Charge -- 2.8 -- nC Qgd Gate-Drain Charge -- 8.8 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 22 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/µs (Note 4) -- 260 -- ns Qrr Reverse Recovery Charge -- 1.6 -- µC |
유사한 부품 번호 - FQP6N50C |
|
유사한 설명 - FQP6N50C |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |