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FQD13N10L 데이터시트(PDF) 4 Page - VBsemi Electronics Co.,Ltd

부품명 FQD13N10L
부품 상세설명  N-Channel 100 V (D-S) MOSFET
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제조업체  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

FQD13N10L 데이터시트(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
THERMAL RATINGS
On-Resistance vs. Junction Temperature
0.0
0.
05
0.1
0.15
0.2
0.25
0.3
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (
)
°C
VGS = 10 V
ID = 5 A
Source-Drain Diode Forward Voltage
VSD - Source-to-Drain Voltage (V)
100
10
1
0.3
0.6
0.9
1.2
TJ = 25 °C
TJ = 150 °C
0
Maximum Avalanche Drain Current
vs. Case Temperature
TC - Case Temperature (°C)
0
3
4
5
6
7
0
25
50
75
100
125
150
175
Safe Operating Area
5
0.1
0
0
0
1
0
1
1
1
.
0
Limited by RDS(on)*
1
10
TC = 25 °C
Single Pulse
10 ms
100 ms
1 s, DC
100 µs
10 µs
100
1 ms
V
DS - Drain-to-Source Voltage (V)
* V
GS > minimum VGS at which RDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10- 4
10- 3
10- 2
10
10- 1
1
0.2
0.1
Duty Cycle = 0.5
30
0.05
0.02
Single Pulse
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
FQD13N10L
4


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