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FM120-S ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Formosa MS

๋ถ€ํ’ˆ๋ช… FM120-S
์ƒ์„ธ๋‚ด์šฉ  Chip Schottky Barrier Diodes - Silicon epitaxial planer type
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์ œ์กฐ์‚ฌ  FORMOSA [Formosa MS]
ํ™ˆํŽ˜์ด์ง€  http://www.formosams.com
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FM120-S ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Formosa MS

   
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FM120-S THRU FM1100-S
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
(V)
(V)
(V)
(V)
(
oC)
FM120-S
SS12
20
14
20
FM130-S
SS13
30
21
30
FM140-S
SS14
40
28
40
FM150-S
SS15
50
35
50
FM160-S
SS16
60
42
60
FM180-S
SS18
80
56
80
FM1100-S
S110
100
70
100
0.50
0.70
0.85
-55 to +125
-55 to +150
SYMBOLS
MARKING
CODE
Operating
temperature
VRRM
*1
VRMS
*2
VR
*3
VF
*4
MAXIMUM RATINGS (AT TA=25
oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
IO
1.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
30
A
VR = VRRM TA =
25
oC
0.5
mA
VR = VRRM TA = 125
oC
10
mA
Thermal resistance
Junction to ambient
RqJA
88
oC / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
120
pF
Storage temperature
TSTG
-55
+150
oC
Reverse current
IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
0.181(4.6)
0.165(4.2)
0.071(1.8)
0.060(1.5)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA-S
0.055(1.4)
0.063(1.6)


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