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SL12-MH ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Formosa MS

๋ถ€ํ’ˆ๋ช… SL12-MH
์ƒ์„ธ๋‚ด์šฉ  Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
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์ œ์กฐ์‚ฌ  FORMOSA [Formosa MS]
ํ™ˆํŽ˜์ด์ง€  http://www.formosams.com
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SL12-MH ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Formosa MS

   
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SL12-MH THRU SL14-MH
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC SOD-123H
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0393 gram
(V)
(V)
(V)
(V)
(
oC)
SL12-MH
L2
20
14
20
0.38
SL13-MH
L3
30
14
20
0.40
SL14-MH
L4
40
28
40
0.40
SYMBOLS
MARKING
CODE
-55 to +125
Operating
temperature
VRRM
*1
VRMS
*2
VR
*3
VF
*4
MAXIMUM RATINGS (AT TA=25
oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.2
IO
1.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
25
A
VR = VRRM TA =
25
oC
1.0
mA
VR = VRRM TA = 100
oC
10
mA
Thermal resistance
Junction to ambient
RqJA
42
oC / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
130
pF
Storage temperature
TSTG
-55
+150
oC
Reverse current
IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Low VF Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.035(0.9)
0.028(0.7)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
SOD-123H
0.031(0.8) Typ.


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