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AM29LV800DB-120EF 데이터시트(PDF) 3 Page - Advanced Micro Devices

부품명 AM29LV800DB-120EF
상세설명  8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV800DB-120EF 데이터시트(HTML) 3 Page - Advanced Micro Devices

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PRELIMINARY
This document contains information on a product under development at FASL LLC. The information is intended to
help you evaluate this product. FASL LLC reserves the right to change or discontinue work on this proposed product
without notice.
Publication Am29LV800D_00 Rev. A Amend. 4
Issue Date: January 21, 2005
Am29LV800D
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
Distinctive Characteristics
Single power supply operation
— 2.7 to 3.6 volt read and write operations
for battery-powered applications
Manufactured on 0.23 µm process
technology
— Compatible with 0.32 µm Am29LV800
device
High performance
— Access times as fast as 70 ns
Ultra low power consumption (typical
values at 5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command
sequences
■ Top or bottom boot block configurations
available
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm
automatically writes and verifies data at
specified addresses
Minimum 1 million write cycle guarantee
per sector
20-year data retention at 125°C
— Reliable operation for the life of the system
Package option
— 48-ball FBGA
— 48-pin TSOP
—44-pin SO
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
Hardware reset pin (RESET#)
— Hardware method to reset the device to
reading array data
For new designs, S29AL008D supersedes Am29LV800D and is the factory-recommended migration
path. Please refer to the S29AL008D Data Sheet for specifications and ordering information.


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