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K64F 데이터시트(PDF) 10 Page - NXP Semiconductors |
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K64F 데이터시트(HTML) 10 Page - NXP Semiconductors |
10 / 85 page Table 4. Voltage and current operating behaviors (continued) Symbol Description Min. Max. Unit Notes IOZ Hi-Z (off-state) leakage current (per pin) — 0.25 μA IOZ_RTC_WAK EUP Hi-Z (off-state) leakage current (per RTC_WAKEUP pin) — 0.25 μA RPU Internal pullup resistors (except RTC_WAKEUP pins) 20 50 kΩ 2 RPD Internal pulldown resistors (except RTC_WAKEUP pins) 20 50 kΩ 3 1. Measured at VDD=3.6V 2. Measured at VDD supply voltage = VDD min and Vinput = VSS 3. Measured at VDD supply voltage = VDD min and Vinput = VDD 2.2.4 Power mode transition operating behaviors All specifications except tPOR, and VLLSx→RUN recovery times in the following table assume this clock configuration: • CPU and system clocks = 100 MHz • Bus clock = 50 MHz • FlexBus clock = 50 MHz • Flash clock = 25 MHz Table 5. Power mode transition operating behaviors Symbol Description Min. Max. Unit Notes tPOR After a POR event, amount of time from the point VDD reaches 1.71 V to execution of the first instruction across the operating temperature range of the chip. — 300 μs • VLLS0 → RUN — 156 μs • VLLS1 → RUN — 156 μs • VLLS2 → RUN — 78 μs • VLLS3 → RUN — 78 μs • LLS → RUN — 4.8 μs • VLPS → RUN — 4.5 μs • STOP → RUN — 4.5 μs General 10 Kinetis K64F Sub-Family Data Sheet, Rev. 7, 11/2016 NXP Semiconductors |
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