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KFG2816Q1M-PIB 데이터시트(PDF) 11 Page - Samsung semiconductor

부품명 KFG2816Q1M-PIB
상세설명  OneNAND SPECIFICATION
Download  87 Pages
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제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KFG2816Q1M-PIB 데이터시트(HTML) 11 Page - Samsung semiconductor

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background image
OneNAND128
FLASH MEMORY
11
Page:1KB+32B
Sector(main area):512B
Sector(spare area):16B
BootRAM 0
BootRAM 1
DataRAM 0_0
DataRAM 0_1
BootRAM
Sector
DataRAM 0
DataRAM 1_0
DataRAM 1_1
DataRAM 1
Main area data
Spare area data
(512B)
(16B)
Main area data
Spare area data
(512B)
(16B)
(BufferRAM)
(NAND array)
Figure 2. BufferRAM and NAND array structure
Block:
64KB+2KB
64pages
NOTE:
1)
The 1st word of spare area in 1st and 2nd page of every invalid block is reserved for the invalid block information by manufacturer.
Please refer to page 59 about the details.
2) These words are managed by internal ECC logic. So it is recommended that the important data like LSN(Logical Sector Number)
are written.
3) These words are reserved for the future purpose by manufacturer. These words will be dedicated to internal logic.
4) These words are for free usage.
5)
The 5th, 6th and 7th words are dedicated to internal ECC logic. So these words are only readable. The other words are program-
mable by command.
6)
ECCm 1st, ECCm 2nd, ECCm 3rd: ECC code for Main area data
7)
ECCs 1st, ECCs 2nd: ECC code for 2nd and 3rd word of spare area.
1st W
ECCm
1st
ECCm
2nd
ECCm
3rd
ECCs
1st
ECCs
2nd
LSB
MSB
LSB
MSB
2nd W
LSB
MSB
3rd W
LSB
MSB
4th W
LSB
MSB
5th W
LSB
MSB
6th W
LSB
MSB
7th W
LSB
MSB
8th W
LSB
MSB
Figure 3. Spare area of NAND array assignment
FFh
Note1 Note1 Note2 Note2 Note2 Note3 Note3 Note3
Note4 Note4
(Note3)
Main area
256W
Main area
256W
Spare
area
8W
Spare
area
8W


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