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IRFP460 데이터시트(PDF) 1 Page - IXYS Corporation

부품명 IRFP460
상세설명  MegaMOS - Power MOSFET
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제조업체  IXYS [IXYS Corporation]
홈페이지  http://www.ixys.com
Logo IXYS - IXYS Corporation

IRFP460 데이터시트(HTML) 1 Page - IXYS Corporation

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© 2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
500
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 MΩ
500
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C = 25°C20
A
I
DM
T
C = 25°C, pulse width limited by TJM
80
A
I
AR
20
A
E
AR
T
C = 25°C28
mJ
dv/dt
I
S
≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
3.5
V/ns
T
J ≤ 150°C, RG = 2 Ω
P
D
T
C = 25°C
260
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
M
d
Mounting torque
1.15/10
Nm/lb.in.
Weight
6g
Maximum lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
N-Channel Enhancement Mode, HDMOSTM Family
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D = 250 µA
500
V
V
GS(th)
V
DS
= V
GS, ID = 250 µA2
4
V
I
GSS
V
GS
=
±20 V
DC, VDS = 0
±100
nA
I
DSS
V
DS
= 0.8 • V
DSS
T
J = 25°C25
µA
V
GS = 0 V
T
J = 125°C
250
µA
R
DS(on)
V
GS
= 10 V, I
D = 12 A
0.25
0.27
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
MegaMOSTM
IRFP 460 V
DSS
= 500 V
Power MOSFET
I
D(cont)
= 20 A
R
DS(on)
= 0.27
G = Gate,
D = Drain,
S = Source,
TAB = Drain
Features
l Repetitive avalanche energy rated
l Fast switching times
l Low R
DS (on) HDMOS
TM process
l Rugged polysilicon gate cell structure
l High Commutating dv/dt Rating
Applications
l Switching Power Supplies
l Motor controls
92825D (5/98)
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.


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