IRL2910S/L

PD - 91376C

S

D

G

l

Logic-Level Gate Drive

l

Surface Mount

l

Advanced Process Technology

l

Ultra Low On-Resistance

l

Dynamic dv/dt Rating

l

Fast Switching

l

Fully Avalanche Rated

10/09/03

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.75

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

40

Thermal Resistance

°C/W

Parameter

Max.

Units

55

39

A

Pulsed Drain Current …

190

Power Dissipation

3.8

W

Power Dissipation

200

W

Linear Derating Factor

1.3

W/°C

Gate-to-Source Voltage

± 16

V

Single Pulse Avalanche Energy‚…

520

mJ

Avalanche Current

29

A

Repetitive Avalanche Energy

20

mJ

dv/dt

Peak Diode Recovery dv/dt ƒ…

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

The through-hole version (IRL2910L) is available for low-

profile applications.

Description

2

D Pak

TO-262