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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AOB42S60 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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AOB42S60 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor AOB42S60 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA 600 V VGS(th) Gate Threshold Voltage VDS= 5V; ID = 250μA 2.5 3.8 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 21A VGS= 10V; ID= 21A;TJ= 150℃ 109 310 mΩ IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V ±100 nA IDSS Drain-Source Leakage Current VDS= 600V; VGS= 0V VDS= 480V; VGS= 0V;TJ= 150℃ 10 1 μ A VSD Diode forward voltage Is= 21A; VGS = 0V 0.84 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. |
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