AOD609 datasheet(2/13 Pages) VBSEMI

부품명	AOD609

상세설명	N- and P-Channel 40 V (D-S) MOSFET

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Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.





SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

N-Ch

40

-

V

VGS = 0 V, ID = - 250 μA

P-Ch

- 40

-

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

N-Ch

1.0

-

3.0

VDS = VGS, ID = - 250 μA

P-Ch

- 1.0

-

-30

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

N-Ch

-

± 100

nA

P-Ch

-

± 100

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = 40 V

N-Ch

-

1

μA

VGS = 0 V

VDS = - 40 V

P-Ch

-

- 1

VGS = 0 V

VDS = 40 V, TJ = 125 °C

N-Ch

-

50

VGS = 0 V

VDS = - 40 V, TJ = 125 °C

P-Ch

-

- 50

VGS = 0 V

VDS = 40 V, TJ = 175 °C

N-Ch

-

150

VGS = 0 V

VDS = - 40 V, TJ = 175 °C

P-Ch

-

- 150

On-State Drain Currenta

ID(on)

VGS = 10 V

VDS 5 V

N-Ch

25

-

A

VGS = - 10 V

VDS 5 V

P-Ch

- 25

-

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V

ID = 38 A

N-Ch

-

0.014



VGS = - 10 V

ID = - 38 A

P-Ch

-

0.014

VGS = 10 V

ID = 38 A, T

J = 125 °C

N-Ch

-

0.017

VGS = - 10 V

ID = - 38 A, T

J = 125 °C

P-Ch

-

0.017

VGS = 10 V

ID = 38 A, T

J = 175 °C

N-Ch

-

0.025

VGS = - 10 V

ID = - 38 A, T

J = 175 °C

P-Ch

-

0.025

VGS = 4.5 V

ID = 30 A

N-Ch

-

0.016

-

VGS = - 4.5 V

ID = - 30A

P-Ch

-

0.016

-

Forward Transconductanceb

gfs

VDS = 15 V, ID = 38 A

N-Ch

-

40

-

S

VDS = - 15 V, ID = - 38 A

P-Ch

-

18

-

Dynamicb

Input Capacitance

Ciss

VGS = 0 V

VDS = 20 V, f = 1 MHz

N-Ch

-

1799

2248

pF

VGS = 0 V

VDS = - 20 V, f = 1 MHz

P-Ch

-

2000

3500

Output Capacitance

Coss

VGS = 0 V

VDS = 20 V, f = 1 MHz

N-Ch

-

282

352

VGS = 0 V

VDS = - 20 V, f = 1 MHz

P-Ch

-

320

550

Reverse Transfer Capacitance

Crss

VGS = 0 V

VDS = 20 V, f = 1 MHz

N-Ch

-

109

136

VGS = 0 V

VDS = - 20 V, f = 1 MHz

P-Ch

-

220

360

Total Gate Chargec

Qg

VGS = 10 V

VDS = 20 V, ID = 10 A

N-Ch

-

310

-

nC

VGS = - 10 V

VDS = - 20 V, ID = - 10 A

P-Ch

Gate-Source Chargec

Qgs

VGS = 10 V

VDS = 20 V, ID = 10 A

N-Ch

-

5.7

-

VGS = - 10 V

VDS = - 20 V, ID = - 10 A

P-Ch

-

5.5

-

Gate-Drain Chargec

Qgd

VGS = 10 V

VDS = 20 V, ID = 10 A

N-Ch

-

4.8

-

VGS = - 10 V

VDS = - 20 V, ID = - 10 A

P-Ch

-

10.5

-

Gate Resistance

Rg

f = 1 MHz

N-Ch

2

4.11

6.2



P-Ch

3.1

6.3

9.5

-

420

-

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