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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AOI407 데이터시트(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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AOI407 데이터시트(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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P-Channel 4 0 V (D-S) MOSFET FEATURES • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) a - 40 0.010 at VGS = - 10 V ± 0.0 at VGS = - 4.5 V ± S G D P-Channel MOSFET Notes: a. Package limited. b. Duty cycle 1 %. c. When mounted on 1" square PCB (FR-4 material). d. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 40 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID - a A TC = 125 °C - 52 Pulsed Drain Current IDM - 220 Avalanche Current IAR - 60 Repetitive Avalanche Energyb L = 0.1 mH EAR 180 mJ Power Dissipation TC = 25 °C PD 45 W TA = 25 °C 3.75 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient PCB Mount (TO-263)c RthJA 40 °C/W Free Air (TO-220AB) 62.5 Junction-to-Case RthJC 0.8 Available RoHS* COMPLIANT 14 55 54 55 TO-251 S D G Top View www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AOI407 1 |
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