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TIP142 데이터시트(PDF) 2 Page - ON Semiconductor |
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TIP142 데이터시트(HTML) 2 Page - ON Semiconductor |
2 / 6 page TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 2 Motorola Bipolar Power Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 30 mA, IB = 0) TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 VCEO(sus) 60 80 100 — — — — — — Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP140, TIP145 (VCE = 40 Vdc, IB = 0) TIP141, TIP146 (VCE = 50 Vdc, IB = 0) TIP142, TIP147 ICEO — — — — — — 2.0 2.0 2.0 mA Collector Cutoff Current (VCB = 60 V, IE = 0) TIP140, TIP145 (VCB = 80 V, IE = 0) TIP141, TIP146 (VCB = 100 V, IE = 0) TIP142, TIP147 ICBO — — — — — — 1.0 1.0 1.0 mA Emitter Cutoff Current (VBE = 5.0 V) IEBO — — 2 0 mA ON CHARACTERISTICS (1) DC Current Gain (IC = 5.0 A, VCE = 4.0 V) (IC = 10 A, VCE = 4.0 V) hFE 1000 500 — — — — — Collector–Emitter Saturation Voltage (IC = 5.0 A, IB = 10 mA) (IC = 10 A, IB = 40 mA) VCE(sat) — — — — 2.0 3.0 Vdc Base–Emitter Saturation Voltage (IC = 10 A, IB = 40 mA) VBE(sat) — — 3.5 Vdc Base–Emitter On Voltage (IC = 10 A, VCE = 4.0 Vdc) VBE(on) — — 3.0 Vdc SWITCHING CHARACTERISTICS Resistive Load (See Figure 1) Delay Time (V 30 V I 5 0 A td — 0.15 — µs Rise Time (VCC = 30 V, IC = 5.0 A, IB = 20 mA Duty Cycle v 20% tr — 0.55 — µs Storage Time IB = 20 mA, Duty Cycle v 2.0%, IB1 = IB2, RC & RB Varied, TJ = 25_C) ts — 2.5 — µs Fall Time B1 B2, CB , J ) tf — 2.5 — µs (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2.0%. Figure 1. Switching Times Test Circuit 10 0.2 Figure 2. Switching Times IC, COLLECTOR CURRENT (AMP) 5.0 2.0 0.5 0.1 0.5 1.0 3.0 5.0 10 20 0.2 PNP NPN tf tr ts td @ VBE(off) = 0 V2 approx +12 V V1 appox. – 8.0 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 25 µs 0 RB 51 D1 + 4.0 V VCC – 30 V RC TUT ≈ 8.0 k ≈ 40 SCOPE for td and tr, D1 is disconnected and V2 = 0 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C For NPN test circuit reverse diode and voltage polarities. 1.0 |
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