전자부품 데이터시트 검색엔진 |
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AM29N323D 데이터시트(PDF) 32 Page - Advanced Micro Devices |
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AM29N323D 데이터시트(HTML) 32 Page - Advanced Micro Devices |
32 / 48 page August 8, 2002 Am29N323D 31 AC CHARACTERISTICS Erase/Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. 3. Does not include the preprogramming time. Parameter Description 11A Unit JEDEC Standard tAVAV tWC Write Cycle Time (Note 1) Min 110 ns tAVWL tAS Address Setup Time Min 5 ns tWLAX tAH Address Hold Time Min 7 ns tAVDP AVD# Low Time Min 12 ns tDVWH tDS Data Setup Time Min 50 ns tWHDX tDH Data Hold Time Min 0 ns tGHWL tGHWL Read Recovery Time Before Write Typ 0 ns tELWL tCS CE# Setup Time Typ 0 ns tWHEH tCH CE# Hold Time Typ 0 ns tWLWH tWP/tWRL Write Pulse Width Typ 60 ns tWHWL tWPH Write Pulse Width High Typ 30 ns tSR/W Latency Between Read and Write Operations Min 0 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Typ 11.5 µs tWHWH1 tWHWH1 Accelerated Programming Operation (Note 2) Typ 4 µs tWHWH2 tWHWH2 Sector Erase Operation (Notes 2, 3) Typ 1.5 sec tVPP VPP Rise and Fall Time Min 500 ns tVPS VPP Setup Time (During Accelerated Programming) Min 1 µs tVCS VCC Setup Time Min 50 µs |
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