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M39P0R9070E0 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - STMicroelectronics

๋ถ€ํ’ˆ๋ช… M39P0R9070E0
์ƒ์„ธ๋‚ด์šฉ  512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
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์ œ์กฐ์‚ฌ  STMICROELECTRONICS [STMicroelectronics]
ํ™ˆํŽ˜์ด์ง€  http://www.st.com
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PRELIMINARY DATA
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Rev. 1
November 2005
1/26
1
M39P0R9070E0
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory
128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
Features summary
โ–  Multi-chip package
โ€“ 1die of 512 Mbit (32Mb x 16, Multiple Bank,
Multi-Level, Burst) Flash memory
โ€“ 1 die of 128 Mbit (4 Banks of 2Mb x16)
Low
Power Synchronous Dynamic RAM
โ–  Supply voltage
โ€“VDDF = VCCP = VDDQ = 1.7 to 1.95V
โ€“VPPF = 9V for fast program (12V tolerant)
โ–  Electronic signature
โ€“ Manufacturer Code: 20h
โ€“ Device Code: 8819
โ–  Package
โ€“ ECOPACKยฎ (RoHS compliant)
Flash memory
โ–  Synchronous / asynchronous read
โ€“ Synchronous Burst Read mode:
108MHz, 66MHz
โ€“ Asynchronous Page Read mode
โ€“ Random Access: 93ns
โ–  Programming time
โ€“ 4ยตs typical Word program time using Buffer
Enhanced Factory Program command
โ–  Memory organization
โ€“ Multiple Bank Memory Array: 64 Mbit
Banks
โ€“ Four Extended Flash Array (EFA) Blocks of
64 Kbits
โ–  Dual operations
โ€“ program/erase in one Bank while read in
others
โ€“ No delay between read and write
operations
โ–  Security
โ€“ 64-bit unique device number
โ€“ 2112-bit user programmable OTP Cells
โ–  100,000 program/erase cycles per block
โ–  Block locking
โ€“ All Blocks locked at power-up
โ€“ Any combination of Blocks can be locked
with zero latency
โ€“WPF for Block Lock-Down
โ€“ Absolute Write Protection with VPPF = VSS
โ–  Common Flash Interface (CFI)
LPSDRAM
โ–  128Mbit synchronous dynamic RAM
โ€“ Organized as 4 Banks of 2 MWords, each
16 bits wide
โ–  Synchronous burst read and write
โ€“ Fixed Burst Lengths: 1, 2, 4, 8 words or Full
Page
โ€“ Burst Types: Sequential and Interleaved.
โ€“ Maximum Clock Frequency: 104MHz
โ€“CAS Latency 2, 3
โ–  Automatic precharge
โ–  Low power features:
โ€“ PASR (Partial Array Self Refresh),
โ€“ Automatic TCSR (Temperature
Compensated Self Refresh)
โ€“ Driver Strength (DS)
โ€“ Deep Power-Down Mode
โ–  Auto Refresh and Self Refresh
TFBGA105 (ZAD)
9 x 11mm
FBGA
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