AM4492N datasheet(1/4 Pages) DOINGTER

부품명	AM4492N

상세설명	N-Channel MOSFET uses advanced trench technology

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=100V,ID=8A,RDS(ON)<20mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current-TC=25℃

1

8

A

Continuous Drain Current-TC=100℃

---

Pulsed Drain Current

2

32

EAS

Single Pulse Avalanche Energy

5

30

mJ

PD

Power Dissipation

3

3.5

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

---

℃/W

RƟJA

Thermal Resistance Junction to mbient

4

35.7

℃/W

G

D

S1

S

AM4492N

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AM4492N 데이터시트(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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