전자부품 데이터시트 검색엔진 |
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AO4606 데이터시트(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AO4606 데이터시트(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
1 / 8 page www.doingter.cn — 1 — Description: This P-Chanel and N-Channel MOSFET use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features: 1) N-Channel: VDS=30V,ID=6.5A,RDS(ON)<30mΩ@VGS=10V P-Channel: VDS=-30V,ID=-7A,RDS(ON)<33mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings:(T C=25℃ unless otherwise noted) Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±20 ±20 V ID Continuous Drain Current 6.5 -7 A Continuous Drain Current-TC=100℃ 5.4 -5.8 Pulsed Drain Current 1 30 -30 EAS Single Pulse Avalanche Energy 3 --- --- mJ PD Power Dissipation 4 2 2 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics: Symbol Parameter Channel Max Units RƟJA Thermal Resistance,Junction to Ambient 2 N-Ch 62.5 ℃/W RƟJA Thermal Resistance,Junction to Ambient 2 P-Ch 62.5 G2 D1 D1 D2 D2 S1 G1 S2 AO4606 |
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