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FTK08DFN 데이터시트(PDF) 2 Page - First Silicon Co., Ltd |
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FTK08DFN 데이터시트(HTML) 2 Page - First Silicon Co., Ltd |
2 / 4 page 2014.10. 10 2/4 FTK08DFN Revision No : 0 Thermal Resistance from Junction to Ambient(Note1b) RθJA 173 ℃/W Thermal Resistance from Junction to Ambient(Note1c) RθJA 69 ℃/W Thermal Resistance from Junction to Ambient(Note1d) RθJA 151 ℃/W T e r u t a r e p m e T n o i t c n u J j 150 T e r u t a r e p m e T e g a r o t S stg -55 ~+150 ℃ Notes:1. RθJA is determined with the device mounted on a 1.5 x 1.5 in. PCB of FR-4 material. (a) when mounted on a 1 in pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. 2 (b) when mounted on a minimum pad of 2 oz copper. For single operation. (c) when mounted on a 1 in 2pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For dual operation. (d) when mounted on a minimum pad of 2 oz copper. For dual operation. Electrical characteristics (Ta=25 ℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit On/Off Characteristics Drain-source breakdown voltage (BR)DSS VGS = 0V, ID =-250µA -20 V e g a t l o v d l o h s e r h t te- a G GS(th) VDS =VGS, I D=-250µA -0.4 -1 V Gate-body leakage current GSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current DSS VDS =-16V, VGS =0V -1 µA VGS =-4.5V, ID =-3.6A 60 VGS =-2.5V, ID =-3A 80 VGS =-1.8V, ID =-2A 110 Drain-source on-state resistance (Note 2) DS(on) VGS =-1.5V, ID =-1A 170 mΩ Forward transconductance (Note 2) FS VDS =-10V, ID =-2.7A 5.5 S Charges , Capacitances and Gate resistance(Note3) C e c n a t i c a p a c t u p n I iss 480 C e c n a t i c a p a c t u p t u O oss 46 Reverse transfer capacitance rss VDS =-15V,VGS=0V,f =1MHz 10 pF Q e g r a h c e t a g l a t o T g 7.2 Q e g r a h c e c r u o s - e t a G gs 2.2 Q e g r a h c n i a r d - e t a G gd VDS =-4.5V,VGS=-6V,ID =-2.8A 1.2 nC Switching times (Note3) t e m i t y a l e d n o - n r u T d(on) 38 t e m i t e s i R r 25 t e m i t y a l e d f f o - n r u T d(off) 43 t e m i t ll a F f VDS=-6V,ID =-2.8A, VGS=-4.5V,RG=6Ω 5 ns Source-drain diode characteristics Forward on voltage (Note2) SD VGS =0V, IS =-1A -0.8 V Notes: 2. Pulse Test : Pulse width≤300µs, duty cycle ≤ 2%. 3. These parameters have no way to verify. V V I I R g C |
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