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PMEG1020EH 데이터시트(PDF) 3 Page - NXP Semiconductors

부품명 PMEG1020EH
상세설명  10 V, 2 A ultra low VF MEGA Schottky barrier rectifiers
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

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9397 750 14929
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 14 April 2005
3 of 9
Philips Semiconductors
PMEG1020EH; PMEG1020EJ
10 V, 2 A ultra low VF MEGA Schottky barrier rectifiers
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating are available on request.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4]
Soldering point of cathode tab.
7.
Characteristics
[1]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Table 6:
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Table 7:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from junction
to ambient
in free air
PMEG1020EH
[1] [2] -
-
330
K/W
[2] [3] -
-
150
K/W
PMEG1020EJ
[1] [2] -
-
350
K/W
[2] [3] -
-
150
K/W
Rth(j-sp)
thermal resistance from junction
to solder point
[4]
PMEG1020EH
-
-
60
K/W
PMEG1020EJ
-
-
55
K/W
Table 8:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 0.01 A
[1] -
100
130
mV
IF = 0.1 A
[1] -
170
200
mV
IF =1A
[1] -
280
350
mV
IF =2A
[1] -
350
460
mV
IR
reverse current
VR = 5 V
-
0.7
2
mA
VR = 8 V
-
1
2.5
mA
VR = 10 V
-
1.2
3
mA
Cd
diode capacitance
VR = 5 V; f = 1 MHz
-
40
50
pF


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