SCN2C60 datasheet(2/5 Pages) ETC1 | Sensitive Gate Silicon Controlled Rectifiers

부품명	SCN2C60

상세내용	Sensitive Gate Silicon Controlled Rectifiers

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Electrical Characteristics ( T

C = 25 °C unless otherwise noted )

Symbol

Items

Conditions

Ratings

Unit

Min.

Typ.

Max.

IDRM

Repetitive Peak Off-State

Current

VAK = VDRM or VRRM ; RGK = 1000 Ω

TC = 25 °C

TC = 125 °C

─

200

㎂

VTM

Peak On-State Voltage (1)

( ITM =3 A, Peak )

─

1.2

1.7

IGT

Gate Trigger Current (2)

VAK = 6 V, RL=100 Ω

TC = 25 °C

TC = - 40 °C

─

200

500

㎂

VGT

Gate Trigger Voltage (2)

VD = 7 V, RL=100 Ω

TC = 25 °C

TC = - 40 °C

─

0.8

1.2

VGD

Non-Trigger Gate Voltage (1)

VAK = 12 V, RL=100 Ω TC = 125 °C

0.2

──

dv/dt

Critical Rate of Rise Off-State

Voltage

VGM = 0.67VDRM,

Exponential waveform , RGK = 1000 Ω

TJ = 125 °C

200

──

V/㎲

di/dt

Critical Rate of Rise On-State

Current

ITM = 3A, Ig = 10mA

A/㎲

Holding Current

VAK = 12 V, Gate Open

TC = 25 °C

TC = - 40 °C

─

5.0

Rth(j-c)

Thermal Impedance

Junction to case

──

°C/W

Rth(j-a)

Thermal Impedance

Junction to Ambient

──

160

°C/W

SCN2C60

2/5

※

Notes :

1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%

2. Does not include RGK in measurement.

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